Description
Specifications:
Laser medium: Ga IAS –semiconductor terminal laser
Output power 500 mw
Predominantly laser output wave length: 810mm
Probe indication light wavelength: 650mm
Ambient temperature: 50~400c
Relative humidity :< 80%q
Technical specifications:
Laser beam class: 3B
Laser type: semiconductor GaAs
Modes of operation: continuous pulse up to 5 kHz
Wave length: 650mm
Maximum probe power: 500mw
Power density: 0.8w/cm2
Beam surface: 0.025cm2
Max energy within 1 min: 1.2joules
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